Infineon IMBG65R072M1HXTMA1

Name: Infineon IMBG65R072M1HXTMA1
Brand: Infineon
SKU: IMBG65R072M1HXTMA1

Silicon Carbide MOSFET, Single, N Channel, 33 A, 650 V, 0.072 ohm, TO-263

$ 3.589

NRND

制造商页面

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics		IMBG65R072M1HXTMA1	953	1		6.439	5.114	3.845	3.654	3.654
Rochester Electronics		IMBG65R072M1HXTMA1	2,677					3.140	2.810	2.640	5h
DigiKey	2	448-IMBG65R072M1HXTMA1CT-ND	959	1	Cut Tape	8.010	5.429	3.967	3.844	3.844
Newark		IMBG65R072M1HXTMA1	0	1	Cut Tape	7.260	5.810	4.700	3.700	3.700
Avnet		IMBG65R072M1HXTMA1	0	1K					3.589	3.221	1d

数据表和文档

下载 Infineon IMBG65R072M1HXTMA1 的数据表和制造商文档。

库存历史记录

3 个月趋势:

-40.39%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IMBG65R072M1HXTMA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2022-01-11

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IMBG65R072M1HXTMA1 的描述。

Silicon Carbide MOSFET, Single, N Channel, 33 A, 650 V, 0.072 ohm, TO-263

EBV Elektronik

Power Field-Effect Transistor, 33A I(D), 650V, 0.094ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263

IHS

Sic Mosfet, N-Ch, 650V, 33A, To-263-7; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:140W Rohs Compliant: Yes |Infineon Technologies IMBG65R072M1HXTMA1

Newark

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R072M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in mid power applications. It is optimized to enable max system performance, compactness and reliability.

Infineon