Infineon IKW75N60TFKSA1

Name: Infineon IKW75N60TFKSA1
Brand: Infineon
SKU: IKW75N60TFKSA1

428W 80A 600V FS(Field Stop) TO-247-3-1 IGBT Transistors / Modules ROHS

$ 4.22

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	61M6737	69	1		7.620	4.590	4.270	4.270	4.270	12h
Newark		IKW75N60TFKSA1	44	1		7.620	4.590	4.270	4.270	4.270
Future Electronics		IKW75N60TFKSA1	1,200	5	Tube		5.380	5.280	5.180	5.180
Arrow Electronics	2	IKW75N60TFKSA1	510	1		6.603	6.603	4.904	4.071	4.071
DigiKey		IKW75N60TFKSA1-ND	2,187	1	Tube	11.010	11.010	6.445	4.711	4.223

数据表和文档

下载 Infineon IKW75N60TFKSA1 的数据表和制造商文档。

IHS

Datasheet13 页12 年前

Upverter

element14 APAC

_legacy Avnet

Farnell

库存历史记录

3 个月趋势:

+1.27%

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供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-14

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IKW75N60TFKSA1 的描述。

428W 80A 600V FS(Field Stop) TO-247-3-1 IGBT Transistors / Modules ROHS

EBEE

600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

IGBT, N, 600V, 75A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:75A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:428W; Power Dissipation Pd:428W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

Hard-switching 600 V, 75 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon

Configuration = Single / Continuous Collector Current (Ic) A = 75 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 428 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

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