Infineon IKP28N65ES5XKSA1

Name: Infineon IKP28N65ES5XKSA1
Brand: Infineon
SKU: IKP28N65ES5XKSA1

Insulated Gate Bipolar Transistor, 38A I(C), 650V V(BR)CES, N-Channel, TO-220AB

$ 1.403

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min
Newark		IKP28N65ES5XKSA1	37	1	1.510	1.510	1.510	1.510	1.510
Rochester Electronics		IKP28N65ES5XKSA1	625				1.410	1.170	1.040	11h
Arrow Electronics	2	IKP28N65ES5XKSA1	490	1	2.323	1.878	1.614	1.614	1.614
Avnet		IKP28N65ES5XKSA1	0	500						13h
Farnell		IKP28N65ES5XKSA1	91	1	2.584*	2.140*	1.884*	1.360*	1.360*	11h

数据表和文档

下载 Infineon IKP28N65ES5XKSA1 的数据表和制造商文档。

IHS

Datasheet16 页0 年前

库存历史记录

3 个月趋势:

-8.36%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2019-01-25

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2026-03-15

LTD Date2026-09-15

描述

由其分销商提供的 Infineon IKP28N65ES5XKSA1 的描述。

Insulated Gate Bipolar Transistor, 38A I(C), 650V V(BR)CES, N-Channel, TO-220AB

IHS

Trans IGBT Chip N-CH 650V 38A 130W 3-Pin(3+Tab) TO-220 Tube

Verical

Infineon IKP28N65ES5XKSA1 Single IGBT, 38 A 650 V TO-220-3

TodayComponents

IGBT, 650V, 38A, 175DEG C, 130W; DC Collector Current: 38A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins:

Farnell

Hard-switching 650 V, 28 A TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Infineon

Igbt, Single, 650V, 38A, To-220; Continuous Collector Current:38A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:130W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKP28N65ES5XKSA1

Newark