Infineon IKD06N60RATMA1

Name: Infineon IKD06N60RATMA1
Brand: Infineon
SKU: IKD06N60RATMA1

Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

$ 0.444

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IKD06N60RATMA1	2,021					0.470	0.390	0.348	3h
DigiKey	2	IKD06N60RATMA1CT-ND	902	1	Cut Tape	1.570	0.991	0.659	0.470	0.470
Avnet		IKD06N60RATMA1	0	2500						0.367	5h
Arrow Electronics		IKD06N60RATMA1	0	2500						0.421
Farnell		IKD06N60RATMA1	1,133	1		1.473*	0.919*	0.608*	0.431*	0.376*	3h

数据表和文档

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IHS

Datasheet17 页0 年前

Farnell

_legacy Avnet

TME

库存历史记录

3 个月趋势:

-37.31%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-01-12

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IKD06N60RATMA1 的描述。

Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

Verical

“RC-D Fast”: RC-Drives IGBT optimized for high switching frequency | IGBT 600V 12A 100W TO252-3

Win Source

600 V IGBT with anti-parallel diode in TO-252-3 package, PG-TO252-3, RoHS

Infineon SCT

The RC-Drives 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 with integrated reverse conducting diode in a TO-252-3 package has been developed as a cost optimized solution for sensitive consumer drives market.

Infineon

IGBT+ DIODE,600V,4A,TO252; Transistor Type:IGBT; DC Collector Current:6A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W

element14 APAC