Infineon IGW30N60TPXKSA1

Name: Infineon IGW30N60TPXKSA1
Brand: Infineon
SKU: IGW30N60TPXKSA1

High-speed Igbt With Trenchstop Technology For Efficient Switching Up to 175 Deg

$ 0.967

EOL

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IGW30N60TPXKSA1	120	1		3.142	3.142	1.680	1.354	1.354
DigiKey		IGW30N60TPXKSA1-ND	1,979	1	Tube	2.600	2.600	1.390	0.930	0.930
RS (Formerly Allied Electronics)		IGW30N60TPXKSA1	0	2	Bulk		2.090	2.000	2.000	2.000	19h
Avnet		IGW30N60TPXKSA1	0	480					0.841	0.828	3d
Future Electronics		IGW30N60TPXKSA1	0	30	Tube			1.130	1.100	1.070

数据表和文档

下载 Infineon IGW30N60TPXKSA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

TME

库存历史记录

3 个月趋势:

+1.56%

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-04-18

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-10-15

LTD Date2027-04-15

描述

由其分销商提供的 Infineon IGW30N60TPXKSA1 的描述。

HIGH-SPEED IGBT WITH TRENCHSTOP TECHNOLOGY FOR EFFICIENT SWITCHING UP TO 175 DEG

RS (Formerly Allied Electronics)

Hard-switching 600 V, 30 A TRENCHSTOP™ Performance IGBT in TO-247 package combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behaviour.

Infineon

Igbt, Single, 600V, 53A, To-247; Dc Collector Current:53A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW30N60TPXKSA1

Newark

Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 200 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

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