供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-09-30
LTD Date2025-09-30
描述
由其分销商提供的 Infineon IGD01N120H2BUMA1 的描述。
Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3-Pin(2+Tab) DPAK T/R / HighSpeed 2-Technology
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO252-3, RoHS
Infineon SCT
IGBT, N, 1200V, 1.3A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:1.3A; Voltage, Vce Sat Max:2.8V; Power Dissipation:28W; Case Style:D-PAK; Termination Type:SMD; ;RoHS Compliant: Yes
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: Loss reduction in resonant circuits; Temperature stable behavior; Parallel switching capability; Tight parameter distribution; E off optimized for IC =1A | Target Applications: SMPS
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Max Collector Current3.2 A
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity2500
PackagingTape & Reel
Power Dissipation28 W
合规
环境分类
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
合规声明