Infineon IGB15N60TATMA1

Name: Infineon IGB15N60TATMA1
Brand: Infineon
SKU: IGB15N60TATMA1

Trans IGBT Chip N-CH 600V 30A 130mW 3-Pin(2+Tab) D2PAK T/R

$ 0.791

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		IGB15N60TATMA1	950	1		0.824	0.824	0.824	0.824	0.824
DigiKey	3	448-IGB15N60TATMA1CT-ND	1,057	1	Cut Tape	2.460	1.580	1.076	0.860	0.860
Future Electronics		IGB15N60TATMA1	0	1K	Tape & Reel				0.965	0.920
Avnet		IGB15N60TATMA1	0	1K					0.688	0.657	4d
Farnell		IGB15N60TATMA1	1,275	1		2.488*	1.596*	1.068*	0.776*	0.741*	12h

数据表和文档

下载 Infineon IGB15N60TATMA1 的数据表和制造商文档。

IHS

Datasheet12 页10 年前

Upverter

Farnell

库存历史记录

3 个月趋势:

-3.08%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装	3D	下载

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-03-29

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IGB15N60TATMA1 的描述。

Trans IGBT Chip N-CH 600V 30A 130mW 3-Pin(2+Tab) D2PAK T/R

Verical

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-263AB

IHS

Infineon IGB15N60TATMA1 IGBT, 26 A 600 V, 3-Pin PG-TO263-3

TodayComponents

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

ODG (Origin Data Global)

130W 1.5V 600V 30A TO-263 , 10.31mm*9.45mm*4.57mm

UnikeyIC

IGBT TRENCH 600V 30A TO263-3-2

DigiKey

IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W

element14 APAC

Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon