Infineon IGB10N60TATMA1

Name: Infineon IGB10N60TATMA1
Brand: Infineon
SKU: IGB10N60TATMA1

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

$ 0.558

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	IGB10N60TATMA1	870	1		0.600	0.600	0.600	0.600	0.600
Future Electronics	2	IGB10N60TATMA1	100	1	Cut Tape	1.440	1.310	1.230	1.090	1.090
Rochester Electronics		IGB10N60TATMA1	1,062					0.626	0.520	0.463	1d
DigiKey	2	IGB10N60TATMA1CT-ND	298	1	Cut Tape	1.930	1.227	0.825	0.652	0.652
Avnet		IGB10N60TATMA1	0	1K					0.492	0.470	3d

数据表和文档

下载 Infineon IGB10N60TATMA1 的数据表和制造商文档。

IHS

Datasheet12 页10 年前

Upverter

Farnell

库存历史记录

3 个月趋势:

+18.92%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-10

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IGB10N60TATMA1 的描述。

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

TodayComponents

IGB10N60T Series 600 V 20 A 110 W Surface Mount Low Loss IGBT - TO-263-3

Future Electronics

IGBT,600V,10A,TO263; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W

element14 APAC

Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 Discrete in TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon