数据表和文档
下载 Infineon FZ1600R17HP4B2BOSA2 的数据表和制造商文档。
官方数据表6 年前
备用零件
Price @ 1000
$ 932.398
$ 669.78
$ 669.78
Stock
450,826
254,358
254,358
Authorized Distributors
5
5
5
Mount
Screw
Screw
Screw
Case/Package
Module
Module
Module
Collector Emitter Breakdown Voltage
1.7 kV
-
-
Max Collector Current
1.6 kA
1.6 kA
1.6 kA
Power Dissipation
10.5 kW
-
-
Collector Emitter Saturation Voltage
2.25 V
2.25 V
2.25 V
Reverse Recovery Time
-
-
-
供应链
Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-23
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
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描述
由其分销商提供的 Infineon FZ1600R17HP4B2BOSA2 的描述。
Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel
Trans IGBT Module N-CH 1.7KV 1600A 7-pin IHMB130-1
IGBT MOD 1700V 1600A A-IHV130-3
DIODE ARRAY SCHOTTKY 100V D2PAK
2.25V@ 15V,1.6kA 1.6KA IHV-130A-3
1700V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. | Summary of Features: Extended Operation Temperature T(vj op); Enlarged Diode for regenerative operation; Low V(CEsat); 4kV AC 1min Insulation; AlSiC Base Plate for increasing Thermal Cycling Capability; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; UL recognised | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; traction; cav
IGBT, ONE SWITCH, 1700V, 1600A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:1600A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:11kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:11kW
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageModule
MountScrew
Number of Pins7
Number of Terminals7
Technical
Collector Emitter Breakdown Voltage1.7 kV
Collector Emitter Saturation Voltage2.25 V
Collector Emitter Voltage (VCEO)1.7 kV
Continuous Collector Current1.6 kA
Element ConfigurationDual
Max Collector Current1.6 kA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation10.5 kW
Min Operating Temperature-40 °C
Number of Elements2
Package Quantity2
Power Dissipation10.5 kW
Turn-Off Delay Time1.05 µs
Turn-On Delay Time520 ns
Dimensions
Height39 mm
合规
环境分类
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
合规声明