Infineon FS75R12KT3GBOSA1

Infineon FS75R12KT3GBOSA1 IGBT Module, 100 A 1200 V Module, Panel Mount
$ 86.81
EOL

数据表和文档

下载 Infineon FS75R12KT3GBOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

Newark

iiiC

_legacy Avnet

库存历史记录

3 个月趋势:
+0.14%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon FS75R12KT3GBOSA1 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

供应链

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-28
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2026-05-31
LTD Date2026-11-30

描述

由其分销商提供的 Infineon FS75R12KT3GBOSA1 的描述。

Infineon FS75R12KT3GBOSA1 IGBT Module, 100 A 1200 V Module, Panel Mount
Trans IGBT Module N-CH 1200V 100A 355W 35-Pin ECONO3-4 Tray
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
1200 V, 75 A sixpack IGBT Module, AG-ECONO3-4, RoHS
Infineon SCT
TRANSISTOR, IGBT MODULE, 1.2KV, 100A
355W 2.15V hex 1.2KV 100A AG-ECONO3-4 122mm*62mm*17mm
IC PWR DRIVER N-CHAN 1:1 8SOIC
EconoPACK™ 3 1200 V, 75 A sixpack IGBT module with fast TRENCHSTOP™ IGBT3, Emitter Controlled High Efficiency Diode and NTC. Also available as soft switching, low loss device: FS75R12KE3G.
Transistor, Igbt Module, 1.2Kv, 100A; Transistor Polarity:N Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:355W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FS75R12KT3GBOSA1

制造商别名

Infineon 在全球拥有多个品牌,分销商可将其用作替代名称。Infineon 也可称为以下名称:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号:

  • FS75R12KT3G
  • SP000100438