Infineon FS150R12KT4BOSA1

Name: Infineon FS150R12KT4BOSA1
Brand: Infineon
SKU: FS150R12KT4BOSA1

IGBT Modules; FS150R12KT4; INFINEON TECHNOLOGIES; 10; 1.2 kV; 2.2 V; Not Halogen Free

$ 93.646

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	FS150R12KT4BOSA1	19	1		206.23	206.23	206.23	206.23	206.23
DigiKey		FS150R12KT4BOSA1-ND	95	1	Tray	116.56	93.646	93.646	93.646	93.646
Avnet		FS150R12KT4BOSA1	0	10			107.02	96.047	93.646	93.646	22h
Farnell		FS150R12KT4BOSA1	38	1		128.90*	124.66*	124.66*	124.66*	124.66*	19h
Mouser		641-FS150R12KT4	22	1	Tray	116.56	107.03	107.03	107.03	107.03

数据表和文档

下载 Infineon FS150R12KT4BOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

Newark

iiiC

_legacy Avnet

库存历史记录

3 个月趋势:

+3.14%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-26

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon FS150R12KT4BOSA1 的描述。

IGBT Modules; FS150R12KT4; INFINEON TECHNOLOGIES; 10; 1.2 kV; 2.2 V; Not Halogen Free

Maritex

TRANSISTOR, IGBT MODULE, 1.2KV, 150A; Transistor Polarity: N Channel; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 175W; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra

Farnell

Transistor, Igbt Module, 1.2Kv, 150A; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:175W; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Transistor Mounting:Panel Rohs Compliant: Yes |Infineon FS150R12KT4BOSA1

Newark

EconoPACK™ 3 1200 V, 150 A sixpack IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 Diode and NTC. Also available as variation with PressFIT mounting technology: FS150R12KT4_B11 and as variation with doubled mounting Emitter Controlled 4 diode for active front-end applications: FS150R12KT4_B9.

Infineon