Infineon FP75R12KT3BOSA1

Name: Infineon FP75R12KT3BOSA1
Brand: Infineon
SKU: FP75R12KT3BOSA1

Trans IGBT Module N-CH 1200V 105A 355000mW Automotive 24-Pin ECONO3-3 Tray

$ 84.959

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制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Newark	FP75R12KT3BOSA1	18	1		120.50	120.50	120.50	120.50	120.50
Arrow Electronics	FP75R12KT3BOSA1	7	1		85.181	85.181	85.181	85.181	85.181
Rochester Electronics	FP75R12KT3BOSA1	26					84.740	75.820	71.360	5h
DigiKey	FP75R12KT3BOSA1-ND	5	1	Tray	107.19	84.736	84.736	84.736	84.736
Avnet	FP75R12KT3BOSA1	0	10			96.841	86.908	84.736	84.736	1d

数据表和文档

下载 Infineon FP75R12KT3BOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页11 年前

IHS

TME

iiiC

库存历史记录

3 个月趋势:

-36.65%

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供应链

Country of OriginAustria, Hungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-08

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon FP75R12KT3BOSA1 的描述。

Trans IGBT Module N-CH 1200V 105A 355000mW Automotive 24-Pin ECONO3-3 Tray

Verical

IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity: N Channel; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 355W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor

Farnell

Igbt, Module, N-Ch, 1.2Kv, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:355W; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FP75R12KT3BOSA1

Newark

EconoPIM™ 3 1200 V, 75 A three phase PIM IGBT module with the fast TRENCHSTOP™ IGBT3, Emitter Controlled HE diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are available in Econo2 and Econo3 housing and also available with Solder- or PressFIT pins.

Infineon