Infineon FP25R12W2T4BOMA1

Name: Infineon FP25R12W2T4BOMA1
Brand: Infineon
SKU: FP25R12W2T4BOMA1

1200 V, 25 A reverse conducting PIM IGBT module, AG-EASY2B-1, RoHS

$ 30.75

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		FP25R12W2T4BOMA1	41	1		40.380	40.380	40.380	40.380	40.380
Arrow Electronics	2	FP25R12W2T4BOMA1	30	1		36.936	36.936	36.936	36.936	36.936
Rochester Electronics		FP25R12W2T4BOMA1	15					29.790	26.660	25.090	31m
DigiKey		FP25R12W2T4BOMA1-ND	8	1	Tray	45.390	45.390	32.617	29.795	29.795
Avnet		FP25R12W2T4BOMA1	0	15				31.363	29.795	29.795	3h

数据表和文档

下载 Infineon FP25R12W2T4BOMA1 的数据表和制造商文档。

Infineon

Datasheet1 页11 年前

IHS

element14 APAC

Newark

iiiC

库存历史记录

3 个月趋势:

-27.10%

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-26

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon FP25R12W2T4BOMA1 的描述。

1200 V, 25 A reverse conducting PIM IGBT module, AG-EASY2B-1, RoHS

Infineon SCT

IGBT, LOW POW, 1200V, 25A, EASYPIM; Transistor Polarity: N Channel; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipati; Available until stocks are exhausted Alternative available

Farnell

Igbt Module, 1.2Kv, 25A, Module; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:175W; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FP25R12W2T4

Newark

EasyPIM™ 2B 1200 V, 25 A reverse conducting PIM IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available with Thermal Interface Material. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are available in Econo2 and Econo3 housing and also available with Solder- or PressFIT pins: FP25R12W2T4_B11

Infineon