Infineon FP15R12W1T4B3BOMA1

Name: Infineon FP15R12W1T4B3BOMA1
Brand: Infineon
SKU: FP15R12W1T4B3BOMA1

Infineon FP15R12W1T4B3BOMA1 Common Collector IGBT Module, 28 A 1200 V, 23-Pin EASY1B, PCB Mount

$ 22.12

Production

制造商页面数据表

价格与库存

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非授权经销商

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Distributor	SKU		Min	Pkg
Newark	FP15R12W1T4B3BOMA1	41	1		34.930	27.310	23.230	22.690	22.690
Rochester Electronics	FP15R12W1T4B3BOMA1	199					21.560	19.290	18.150	8h
DigiKey	FP15R12W1T4B3BOMA1-ND	32	1	Tray	34.990	34.990	23.510	21.550	21.550
Avnet	FP15R12W1T4B3BOMA1	0	24				24.481	23.015	23.015	10h
Arrow Electronics	FP15R12W1T4B3BOMA1	0	24				21.550	21.550	21.550

数据表和文档

下载 Infineon FP15R12W1T4B3BOMA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-9.58%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-05-18

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon FP15R12W1T4B3BOMA1 的描述。

Infineon FP15R12W1T4B3BOMA1 Common Collector IGBT Module, 28 A 1200 V, 23-Pin EASY1B, PCB Mount

TodayComponents

1200 V, 15 A three phase PIM IGBT module, AG-EASY1B-1, RoHS

Infineon SCT

Trans IGBT Module N-CH 1200V 28A 130W 20-Pin EASY1B-1 Tray

Verical

INFINEON FP15R12W1T4_B3 IGBT Array & Module Transistor, N Channel, 15 A, 1.85 V, 130 W, 1.2 kV, Module

Jak Electronics

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT, LOW POW, 1200V, 15A, EASYPIM

element14 APAC

IGBT, LOW POW, 1200V, 15A, EASYPIM; Transistor Polarity: N Channel; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transi

Farnell

EasyPIM™ 1B 1200 V, 15 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC (without brake chopper). For a higher output current, have a look at the FP15R12W1T7_B3 with the latest TRENCHSTOP™ IGBT7 technology.

Infineon