Infineon FP100R12KT4B11BOSA1

Name: Infineon FP100R12KT4B11BOSA1
Brand: Infineon
SKU: FP100R12KT4B11BOSA1

IGBT-MODULE Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

$ 97.723

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Distributor	SKU		Min	Pkg
Arrow Electronics	FP100R12KT4B11BOSA1	10	1		197.31	197.31	197.31	197.31	197.31
Rochester Electronics	FP100R12KT4B11BOSA1	47					94.520	84.570	79.590	7h
DigiKey	FP100R12KT4B11BOSA1-ND	27	1	Tray	117.47	94.509	94.509	94.509	94.509
Avnet	FP100R12KT4B11BOSA1	0	10			116.44	102.83	100.94	100.94	1d
Farnell	FP100R12KT4B11BOSA1	0	1		133.58*	130.09*	130.09*	130.09*	130.09*	7h

数据表和文档

下载 Infineon FP100R12KT4B11BOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页11 年前

IHS

Farnell

库存历史记录

3 个月趋势:

+57.14%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-11-23

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon FP100R12KT4B11BOSA1 的描述。

IGBT-MODULE Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

ComSIT Distribution GmbH

Igbt, Module, N-Ch, 1.2Kv, 100A; Transistor Polarity:N Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FP100R12KT4B11BOSA1

Newark

EconoPIM™3 1200 V, 100 A three-phase IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and PressFIT contact technology. The Power Integrated Modules (PIM) with integration of rectifier and brake chopper enables system cost savings. Also available as variation with soldering connection technology: FP100R12KT4

Infineon