Infineon FM25W256-G

Name: Infineon FM25W256-G
Brand: Infineon
SKU: FM25W256-G

FRAM 256Kbit Serial-SPI Interface 3.3V Automotive 8-Pin SOIC Tube

$ 5.29

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	FM25W256-G	352	1		7.623	4.407	4.093	4.093	4.093	3d
Newark		FM25W256-G	1,608	1		7.940	7.390	6.660	6.410	6.410
Future Electronics	2	FM25W256-G	2,533	5	Tube		4.520	4.310	4.220	4.220
Arrow Electronics		FM25W256-G	809	1		4.725	4.679	4.603	4.603	4.603
Rutronik		ICPROM10518	97	97				6.480	5.290	5.290	8h

数据表和文档

下载 Infineon FM25W256-G 的数据表和制造商文档。

IHS

Datasheet22 页6 年前

Datasheet13 页13 年前

Upverter

element14 APAC

Newark

Augswan

库存历史记录

3 个月趋势:

+18.11%

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供应链

Country of OriginTaiwan, Thailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.32.00.71

Introduction Date2004-01-27

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon FM25W256-G 的描述。

FRAM 256Kbit Serial-SPI Interface 3.3V Automotive 8-Pin SOIC Tube

Verical

Ferroelectric RAM (FRAM), 256 Kbit, 32K x 8bit, SPI, 20 MHz, 2.7 V to 5.5 V Supply, SOIC-8

EBV Elektronik

FM25W256 Series 256 Kb (32 K x 8) 3.3V Surface Mount SPI F-RAM Memory - SOIC-8

Future Electronics

Ferroelectric Ram, Spi, 256Kbit, Soic-8; Memory Configuration:32K X 8Bit; Interfaces:Spi; Clock Frequency Max:20Mhz; Supply Voltage Min:2.7V; Supply Voltage Max:5.5V; Ic Case/Package:Soic; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Cypress Infineon Technologies FM25W256-G

Newark

FRAM, 256K, SPI, 8SOIC; Memory Size:256Kbit; Memory Configuration:32K x 8bit; NVRAM Features:High Read / Write Operation Endurance; Interface Type:SPI; Supply Voltage Range:2.7V to 5.5V; Memory Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +85°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2011)

Farnell

The FM25W256-G is a 256-Kbit nonvolatile memory with advanced ferroelectric technology, providing reliable data retention for 151 years. Unlike serial flash and EEPROM, it performs write operations at bus speed, with no write delays, and offers substantial write endurance, supporting 1014 read/write cycles. With 100 million times more write cycles than EEPROM, it's ideal for applications requiring frequent or rapid writes, from critical data collection to demanding industrial controls.

Infineon