Infineon FM25V10-G

Name: Infineon FM25V10-G
Brand: Infineon
SKU: FM25V10-G

FM25V10 Series 1 Mb (128 K x 8) 3 V Surface Mount Serial F-RAM Memory - SOIC-8

$ 10.949

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		FM25V10-G	659	1		14.750	13.670	12.090	12.090	12.090
Future Electronics	3	FM25V10-G	213	3	Tube		8.630	8.400	8.400	8.400
Arrow Electronics	3	FM25V10-G	2,774	1		12.381	12.033	11.615	10.907	10.907
Rutronik		ICPROM10516	122	1		16.380	13.360	13.360	13.360	13.360	1d
Rochester Electronics	2	FM25V10-G	3,411					8.390	7.510	7.060	17h

数据表和文档

下载 Infineon FM25V10-G 的数据表和制造商文档。

IHS

Datasheet27 页6 年前

Datasheet26 页12 年前

Future Electronics

element14 APAC

iiiC

库存历史记录

3 个月趋势:

+14.14%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.32.00.71

Introduction Date2016-08-31

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon FM25V10-G 的描述。

FM25V10 Series 1 Mb (128 K x 8) 3 V Surface Mount Serial F-RAM Memory - SOIC-8

Future Electronics

FRAM 1Mbit Serial-SPI 3V/3.3V 8-Pin SOIC Tube | IC FRAM 1M SPI 40MHZ 8SOIC

Win Source

Ferroelectric RAM (FRAM), 1 Mbit (128K x 8) SPI, 40 MHz, 2 V to 3.6 V Supply, SOIC-8

EBV Elektronik

Ferroelectric Ram, Spi, 1Mbit, Soic-8; Memory Configuration:128K X 8Bit; Interfaces:Spi; Clock Frequency Max:40Mhz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Ic Case/Package:Soic; No. Of Pins:8Pins; Ic Mounting:Surface Mount Rohs Compliant: Yes |Cypress Infineon Technologies FM25V10-G

Newark

The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Infineon