Infineon FF900R12IP4BOSA2

Name: Infineon FF900R12IP4BOSA2
Brand: Infineon
SKU: FF900R12IP4BOSA2

1200 V, 900 A dual IGBT module, AG-PRIME2-1-10, RoHS

$ 394.854

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价格与库存

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Distributor	SKU		Min	Pkg
Arrow Electronics	FF900R12IP4BOSA2	3	1		413.85	413.85	413.85	413.85	413.85
Rochester Electronics	FF900R12IP4BOSA2	48			359.67	359.67	338.09	316.51	316.51	9h
DigiKey	448-FF900R12IP4BOSA2-ND	24	1	Tray	384.63	384.63	375.85	375.85	375.85
Avnet	FF900R12IP4BOSA2	0	3			406.33	375.85	375.85	375.85	2d
Future Electronics	FF900R12IP4BOSA2	0	3	Tray		499.68	491.12	491.12	491.12

数据表和文档

下载 Infineon FF900R12IP4BOSA2 的数据表和制造商文档。

IHS

Datasheet9 页0 年前

_legacy Avnet

Newark

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库存历史记录

3 个月趋势:

-16.54%

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供应链

Country of OriginGermany

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-24

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

描述

由其分销商提供的 Infineon FF900R12IP4BOSA2 的描述。

1200 V, 900 A dual IGBT module, AG-PRIME2-1-10, RoHS

Infineon SCT

PrimePACK™ 2 1200 V, 900 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and soft switching chip. Also available with pre-applied Thermal Interface Material.

Infineon

Igbt Module; Continuous Collector Current:900A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:5.1Kw; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:1.2Kv; Product Range:- |Infineon FF900R12IP4

Newark

IGBT, H/B NTC, 1200V, 900A, PRIMEPA; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:5.1kW

element14 APAC