供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-08-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-06-15
LTD Date2021-12-15
相关零件
InfineonFZ600R12KE3HOSA1
62 mm 1200 V, 600 A single switch IGBT module with TRENCHSTOP™ IGBT3 and Emitter Controlled 3 Diode.
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Trans IGBT Module N-CH 1200V 650A 2250000mW Automotive 4-Pin 62MM-2 Tray
描述
由其分销商提供的 Infineon FF800R12KE3NOSA1 的描述。
Trans IGBT Module N-CH 1200V 1.2KA 3900W 10-Pin IHM130-2 Tray
Transistor IGBT Module N-CH 1200V 1200A 20V Screw Mount Tray
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
1200V IHM 130mm Dual IGBT Module with IGBT3 - The best solution for your industry applications. | Summary of Features: High reliability and robust module construction; UL recognised | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; solar; ups
IGBT MOD 1200V 1200A 3900W MOD
FF800R12 INSULATED GATE BIPOLAR TRANSIS;
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageModule
MountScrew
Number of Pins130
Number of Terminals10
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationDual
Max Collector Current1.2 kA
Max Operating Temperature150 °C
Max Power Dissipation3.9 kW
Min Operating Temperature-40 °C
Number of Elements2
Package Quantity2
Power Dissipation3.9 kW