Infineon FF600R12IP4BOSA1

Name: Infineon FF600R12IP4BOSA1
Brand: Infineon
SKU: FF600R12IP4BOSA1

Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount

$ 344.591

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Distributor	SKU		Min	Pkg
Newark	FF600R12IP4BOSA1	7	1		536.88	536.88	536.88	536.88	536.88
Arrow Electronics	FF600R12IP4BOSA1	3	1		344.59	344.59	344.59	344.59	344.59
Rochester Electronics	FF600R12IP4BOSA1	3			304.33	304.33	286.07	267.81	267.81	1d
DigiKey	448-FF600R12IP4BOSA1-ND	1	1	Tray	332.28	332.28	318.03	318.03	318.03
Avnet	FF600R12IP4BOSA1	0	3			343.82	318.03	318.03	318.03	6d

数据表和文档

下载 Infineon FF600R12IP4BOSA1 的数据表和制造商文档。

IHS

Datasheet9 页0 年前

库存历史记录

3 个月趋势:

-48.28%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-24

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon FF600R12IP4BOSA1 的描述。

Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount

TodayComponents

Trans IGBT Module N-CH 1.2KV 600A 8-Pin PRIME2

Verical

Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray

Avnet Japan

1200 V 600 A 3350 W Chassis Mount Trench Field Stop Half Bridge IGBT Module

Future Electronics

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT, H/B NTC, 1200V, 600A, PRIMEPA

element14 APAC

IC OPAMP JFET 4 CIRCUIT 14SOIC

YIC International

Igbt Mod, 1.2Kv, 600A, 3.35Kw; Continuous Collector Current:600A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:3.35Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FF600R12IP4BOSA1

Newark

1200V PrimePACK2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; Unbeatable Robustness; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups; traction

Infineon