Infineon FF500R17KE4BOSA1

Name: Infineon FF500R17KE4BOSA1
Brand: Infineon
SKU: FF500R17KE4BOSA1

Transistor IGBT Module N-CH 1.7kV 500A ±20V Screw Tray

$ 179.591

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Distributor	SKU		Min	Pkg
Newark	FF500R17KE4BOSA1	8	1		99.920	99.920	99.920	99.920	99.920
Arrow Electronics	FF500R17KE4BOSA1	10	1		267.32	267.32	267.32	267.32	267.32
DigiKey	448-FF500R17KE4BOSA1-ND	5	1	Tray	191.49	168.16	168.16	168.16	168.16
Avnet	FF500R17KE4BOSA1	0	10			207.17	182.95	179.59	179.59	4d
Farnell	FF500R17KE4BOSA1	2	1		320.16*	245.02*	245.02*	245.02*	245.02*	20h

数据表和文档

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IHS

Datasheet9 页0 年前

TME

库存历史记录

3 个月趋势:

-6.56%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-08-09

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

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Transistor IGBT Module N-CH 1.7kV 500A ±20V Screw Tray

Avnet Japan

IGBT MOD, DUAL N-CH, 1.7KV, 500A; Transistor Polarity: Dual N Channel; DC Collector Current: 500A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.7kV; Trans

Farnell

Igbt Module, Dual, 1.7Kv, 500A; Continuous Collector Current:500A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Infineon Technologies FF500R17KE4BOSA1

Newark

Our well-known 62 mm 1700V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 3 diode are the right choice for your design. | Summary of Features: 500A / 1700V; T vj op = 150C; RoHS compliant; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; UL/CSA Certification with UL1557 E83336 | Benefits: Existing packages with higher current capability, allows to increase inverter output power with same frame size; Highest power density; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives

Infineon