供应链
Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-25
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
相关零件
描述
由其分销商提供的 Infineon FF450R12KT4HOSA1 的描述。
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
62mm C-series 1200 V, 450 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode. Also available with pre-applied Thermal Interface Material.
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageModule
MountPanel, Screw
Number of Pins7
Number of Terminals7
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current450 A
Element ConfigurationDual
Max Collector Current580 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation2.4 kW
Min Operating Temperature-40 °C
Number of Elements2
Package Quantity10
PolarityNPN
Power Dissipation2.4 kW
Schedule B8541290080
Turn-Off Delay Time450 ns
Turn-On Delay Time160 ns
Dimensions
Height31.4 mm
Length106.4 mm
Width61.4 mm