供应链
Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-24
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
描述
由其分销商提供的 Infineon FF400R12KT3HOSA1 的描述。
Trans IGBT Module N-CH 1200V 580A 2000000mW Tray
Transistor IGBT Module N-CH 1200V 580A 20V Screw Mount Tray
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel
1200 V dual IGBT module, AG-62MM-1-7, RoHS
Infineon SCT
IGBT, MODULE, N-CH, 1.2KV, 580A
FF400R12KT3 - 1200V, 400A DUAL I
2KW 2.15V 1.2KV 580A 106.4mm*61.4mm*30.9mm
The half-bridge 62 mm 1200 V, 400 A dual IGBT modules with fast TRENCHSTOP™ IGBT3 and Emitter Controlled high efficiency diode is the right choice for your design.Also available as variation with Common Emitter: FF400R12KT3_E
Igbt, Module, N-Ch, 1.2Kv, 580A; Transistor Polarity:N Channel; Dc Collector Current:580A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:2Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FF400R12KT3HOSA1
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Number of Terminals7
Technical
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationDual
Max Collector Current580 A
Max Operating Temperature150 °C
Max Power Dissipation2 kW
Number of Elements2
Package Quantity10
合规
环境分类
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
合规声明