Infineon FF400R12KE3HOSA1

Name: Infineon FF400R12KE3HOSA1
Brand: Infineon
SKU: FF400R12KE3HOSA1

Trans IGBT Module N-CH 1200V 580A 2000000mW 7-Pin 62MM Tray

$ 148.959

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	13AC8654	48	1		176.90	161.46	161.46	161.46	161.46	2d
Newark		FF400R12KE3HOSA1	48	1		176.53	152.12	152.12	152.12	152.12
Arrow Electronics	2	FF400R12KE3HOSA1	810	1		170.81	150.23	150.23	150.23	150.23
Rochester Electronics		FF400R12KE3HOSA1	20			140.43	140.43	132.00	123.58	123.58	21h
DigiKey		FF400R12KE3HOSA1-ND	32	1	Tray	171.39	147.69	147.69	147.69	147.69

数据表和文档

下载 Infineon FF400R12KE3HOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

Elcodis

库存历史记录

3 个月趋势:

+20.01%

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供应链

Country of OriginAustria, Hungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-18

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

描述

由其分销商提供的 Infineon FF400R12KE3HOSA1 的描述。

Trans IGBT Module N-CH 1200V 580A 2000000mW 7-Pin 62MM Tray

Verical

Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

TodayComponents

62 mm 1200 V, 400 A dual IGBT module with TRENCHSTOP™ IGBT3 and emitter controlled high efficiency diode is the right choice for your design.

Infineon

IGBT, MODULE, N-CH, 1.2KV, 580A; Transistor Polarity: N Channel; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 2kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor

Farnell

IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.15 V Energy dissipation during make-time: 25 mJ Energy dissipation during turn-off time: 62 mJ

Distrelec

Igbt Mod, N-Ch, 1.2Kv, 580A/125Deg C/2Kw; Continuous Collector Current:580A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:2Kw; Operating Temperature Max:125°C; Igbt Termination:Tab; Collector Emitter Voltage Max:1.2Kvrohs Compliant: Yes |Infineon Technologies FF400R12KE3HOSA1

Newark