Infineon FF300R12ME4BOSA1

Name: Infineon FF300R12ME4BOSA1
Brand: Infineon
SKU: FF300R12ME4BOSA1

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC

$ 100.15

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制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	FF300R12ME4BOSA1	2					96.800	86.610	81.510	16h
DigiKey	448-FF300R12ME4BOSA1-ND	62	1	Tray	119.84	96.783	96.783	96.783	96.783
Future Electronics	FF300R12ME4BOSA1	0	10	Tray		103.67	101.18	101.18	101.18
Avnet	FF300R12ME4BOSA1	0	10			119.24	105.30	103.36	103.36	18h
Arrow Electronics	FF300R12ME4BOSA1	0	10			102.93	101.05	99.120	97.810

数据表和文档

下载 Infineon FF300R12ME4BOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页13 年前

IHS

ODG (Origin Data Global)

iiiC

_legacy Avnet

库存历史记录

3 个月趋势:

-15.53%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-06-10

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon FF300R12ME4BOSA1 的描述。

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC

Win Source

EconoDUAL™ 3 1200 V, 300 A half-bridge dual IGBT module with low VCEsat and fast TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Also available as variation with PressFIT mounting technology: FF300R12ME4_B11.

Infineon

IGBT, MODULE, N-CH, 1.2KV, 450A; Transistor Polarity: N Channel; DC Collector Current: 450A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 1.6kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transis

Farnell