Infineon FF200R12KS4HOSA1

Name: Infineon FF200R12KS4HOSA1
Brand: Infineon
SKU: FF200R12KS4HOSA1

Trans IGBT Module N-CH 1200V 275A 1400000mW 7-Pin 62MM Tray

$ 105.322

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制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Future Electronics	FF200R12KS4HOSA1	20	10	Tray		112.82	110.10	110.10	110.10
Rochester Electronics	FF200R12KS4HOSA1	1					105.32	94.230	88.690	17h
DigiKey	448-FF200R12KS4HOSA1-ND	43	1	Tray	128.68	105.32	105.32	105.32	105.32
Avnet	FF200R12KS4HOSA1	0	10			129.76	114.59	112.48	112.48	3d
RS (Formerly Allied Electronics)	FF200R12KS4	0	1	Bulk	95.590	95.590	95.590	95.590	95.590	9h

数据表和文档

下载 Infineon FF200R12KS4HOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

TME

Elcodis

库存历史记录

3 个月趋势:

+47.02%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-07-07

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon FF200R12KS4HOSA1 的描述。

Trans IGBT Module N-CH 1200V 275A 1400000mW 7-Pin 62MM Tray

Verical

Infineon FF200R12KS4HOSA1 Series IGBT Module, 275 A 1200 V AG-62MM-1, Panel Mount

TodayComponents

IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module

Fly-Wing Technology

62 mm 1200 V, 200 A dual IGBT modules with fast IGBT2 for high-frequency switching is the right choice for your design. Also available with Thermal Interface Material.

Infineon

Igbt, Module, N-Ch, 1.2Kv, 275A; Transistor Polarity:N Channel; Dc Collector Current:275A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:1.4Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FF200R12KS4HOSA1

Newark