Infineon FF200R12KE4HOSA1

Name: Infineon FF200R12KE4HOSA1
Brand: Infineon
SKU: FF200R12KE4HOSA1

Trans IGBT Module N-CH 1200V 240A 1100000mW 7-Pin 62MM Tray

$ 70.215

Production

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Arrow Electronics	FF200R12KE4HOSA1	10	1		83.440	68.835	68.835	68.835	68.835
DigiKey	FF200R12KE4HOSA1-ND	180	1	Tray	91.630	71.562	70.215	70.215	70.215
Avnet	FF200R12KE4HOSA1	0	10			80.245	72.015	70.215	70.215	2d
Farnell	FF200R12KE4HOSA1	0	1		102.02*	94.268*	92.387*	92.387*	92.387*	22h
Mouser	641-FF200R12KE4	637	1	Tray	91.630	80.250	80.250	80.250	80.250

数据表和文档

下载 Infineon FF200R12KE4HOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

Newark

iiiC

_legacy Avnet

库存历史记录

3 个月趋势:

+261%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-30

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

描述

由其分销商提供的 Infineon FF200R12KE4HOSA1 的描述。

Trans IGBT Module N-CH 1200V 240A 1100000mW 7-Pin 62MM Tray

Verical

Infineon FF200R12KE4HOSA1 IGBT Module, 240 A 1200 V Module, Panel Mount

TodayComponents

62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available with Thermal Interface Material.

Infineon

IGBT MODULE, DUAL NPN, 1.75V, 240A; Transistor Polarity: Dual NPN; DC Collector Current: 240A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 1.1kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

Farnell