Infineon FF200R12KE3HOSA1

Name: Infineon FF200R12KE3HOSA1
Brand: Infineon
SKU: FF200R12KE3HOSA1

Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount

$ 91.28

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Distributor	SKU		Min	Pkg
Newark	FF200R12KE3HOSA1	1	1		137.12	137.12	137.12	137.12	137.12
Rochester Electronics	FF200R12KE3HOSA1	146					91.280	81.670	76.860	22m
DigiKey	FF200R12KE3HOSA1-ND	39	1	Tray	114.09	91.279	91.279	91.279	91.279
Future Electronics	FF200R12KE3HOSA1	0	10	Tray		97.780	95.420	95.420	95.420
Avnet	FF200R12KE3HOSA1	0	10			104.32	93.620	91.279	91.279	2d

数据表和文档

下载 Infineon FF200R12KE3HOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

TME

库存历史记录

3 个月趋势:

-7.53%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-04-28

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

描述

由其分销商提供的 Infineon FF200R12KE3HOSA1 的描述。

Infineon FF200R12KE3HOSA1 Series IGBT Module, 295 A 1200 V, 7-Pin 62MM Module, Panel Mount

TodayComponents

62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT3 and emitter controlled high efficiency diode.

Infineon

Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray

Verical

Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray

Avnet Japan

1200 V, 200 A dual IGBT module, AG-62MM-1-7, RoHS

Infineon SCT

IGBT MODULE 1200V 1050W MODULE

DigiKey

Insulated Gate Bipolar Transistor

IHS

IC INVERT SCHMITT 2CH 2-INP 6SON

YIC International

IGBT, MODULE, N-CH, 1.2KV, 295A; Transistor Polarity: N Channel; DC Collector Current: 295A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 1.05kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transis

Farnell

Igbt, Dual, 1.2Kv, 295A, Module; Continuous Collector Current:295A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:1.05Kw; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FF200R12KE3HOSA1

Newark