Infineon FF1400R12IP4BOSA1

Name: Infineon FF1400R12IP4BOSA1
Brand: Infineon
SKU: FF1400R12IP4BOSA1

Infineon FF1400R12IP4BOSA1 Series IGBT Module, 1.4 kA 1200 V AG-PRIME3-1, Panel Mount

$ 595.669

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制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Future Electronics	FF1400R12IP4BOSA1	0	2	Tray		728.79	728.79	728.79	728.79
Avnet	FF1400R12IP4BOSA1	0	2			633.60	595.67	595.67	595.67	6d
Arrow Electronics	FF1400R12IP4BOSA1	0	2			557.74	557.74	557.74	557.74
Farnell	FF1400R12IP4BOSA1	0	1		832.68*	832.68*	832.68*	832.68*	832.68*	23h
ATI ACCURATE TECHNOLOGY	FF1400R12IP4-INFINEON	3			647.00	549.95	549.95	549.95	549.95	14h

数据表和文档

下载 Infineon FF1400R12IP4BOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页12 年前

IHS

Infineon SCT

_legacy Avnet

Newark

库存历史记录

3 个月趋势:

-100%

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供应链

Country of OriginGermany

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-09-20

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon FF1400R12IP4BOSA1 的描述。

Infineon FF1400R12IP4BOSA1 Series IGBT Module, 1.4 kA 1200 V AG-PRIME3-1, Panel Mount

TodayComponents

Trans IGBT Module N-CH 1200V 1.4KA 7650000mW 10-Pin PRIME3-1 Tray

Verical

PrimePACK™3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

Win Source

IGBT Modules; INFINEON; FF1400R12IP4; 2; 1.75 V; 1.2 kV; 7.65 kW

Maritex

Transistor IGBT Module N-CH 1200V 1400A 20V Screw Mount Tray

EBV Elektronik

FF1400R12IP4 Series 1200 V 1400 A 765 W Half Bridge Dual IGBT Module

Future Electronics

1200 V, 1400 A dual IGBT module, AG-PRIME3-1, RoHS

Infineon SCT

IGBT, H/B NTC, 1200V, 1400A, PRIMEPA

element14 APAC

IGBT Modules PP IHM I XHP 1 7KV

ODG (Origin Data Global)

Insulated Gate Bipolar Transistor, 1200V V(BR)CES

IHS

IGBT MOD 1200V 1400A 765000W MOD

DigiKey

PrimePACK™ 3 1200 V, 1400 A half bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and soft switching chip. Also available with Thermal Interface Material.

Infineon

IGBT,H/B NTC,1200V,1400A,PRIMEPACK; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Max:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12

Farnell