Infineon FF100R12KS4HOSA1

Name: Infineon FF100R12KS4HOSA1
Brand: Infineon
SKU: FF100R12KS4HOSA1

62 mm 1200 V, 100 A dual IGBT modules with fast IGBT2 for high-frequency switching.

$ 94.955

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	FF100R12KS4HOSA1	1					92.850	83.080	78.190	2h
Avnet	FF100R12KS4HOSA1	0	10			106.11	95.231	92.850	92.850	1d
Future Electronics	FF100R12KS4HOSA1	0	10	Tray		99.460	97.060	97.060	97.060
Arrow Electronics	FF100R12KS4HOSA1	0	10			112.59	109.46	106.32	104.21
Mouser	641-FF100R12KS4	88	1	Tray	113.96	106.12	106.12	106.12	106.12

数据表和文档

下载 Infineon FF100R12KS4HOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

Infineon SCT

Elcodis

TME

库存历史记录

3 个月趋势:

-1.11%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-04-19

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon FF100R12KS4HOSA1 的描述。

62 mm 1200 V, 100 A dual IGBT modules with fast IGBT2 for high-frequency switching.

Infineon

Trans IGBT Module N-CH 1200V 150A 780000mW 7-Pin 62MM Tray

Verical

Transistor IGBT Module N-CH 1200V 150A 20V Screw Mount Tray

Avnet

FF100R12KS4 Series 1200 V 150 A 780 W Dual IGBT Module

Future Electronics

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel

IHS

1200 V dual IGBT module, AG-62MM-1-7, RoHS

Infineon SCT

780W 3.2V 1.2KV 150A 106.4mm*61.4mm*30.5mm

UnikeyIC

Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:780W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

Newark