Infineon F3L200R07PE4BOSA1

Name: Infineon F3L200R07PE4BOSA1
Brand: Infineon
SKU: F3L200R07PE4BOSA1

EconoPACK 4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4-diode and NTC

$ 105.205

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价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	F3L200R07PE4BOSA1	3,236					103.96	93.020	87.540	12h
DigiKey	F3L200R07PE4BOSA1-ND	3	1	Tray	127.26	127.26	103.95	103.95	103.95
Future Electronics	F3L200R07PE4BOSA1	0	6	Tray		112.04	108.67	108.67	108.67
Avnet	F3L200R07PE4BOSA1	0	6			118.80	103.95	103.95	103.95	1d
Arrow Electronics	F3L200R07PE4BOSA1	0	6			113.07	109.72	106.46	104.34

数据表和文档

下载 Infineon F3L200R07PE4BOSA1 的数据表和制造商文档。

Infineon

Datasheet1 页14 年前

IHS

element14 APAC

iiiC

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-03-02

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon F3L200R07PE4BOSA1 的描述。

EconoPACK 4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4-diode and NTC

EBV Elektronik

Trans IGBT Module N-CH 650V 200A 680W 20-Pin ECONO4-1 Tray

Verical

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel

IHS

IGBT Modules IGBT Module 200A 650V

Fly-Wing Technology

IGBT, MODULE, N-CH, 650V, 200A

element14 APAC

Igbt, Module, N-Ch, 650V, 200A; Transistor Polarity:N Channel; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:680W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Rohs Compliant: Yes |Infineon F3L200R07PE4BOSA1

Newark