Infineon BSZ096N10LS5ATMA1

Name: Infineon BSZ096N10LS5ATMA1
Brand: Infineon
SKU: BSZ096N10LS5ATMA1

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TSDSON-8, RoHS

$ 0.73

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Distributor		SKU		Min	Pkg
Avnet		BSZ096N10LS5ATMA1	5,000	5K						0.548	3d
Newark		BSZ096N10LS5ATMA1	2,634	1	Cut Tape	2.350	1.640	1.220	0.980	0.980
Arrow Electronics	3	BSZ096N10LS5ATMA1	8,507	1		0.733	0.733	0.733	0.733	0.733
Future Electronics	2	BSZ096N10LS5ATMA1	5,000	5K	Tape & Reel					0.960
Rutronik		STDMOS1164	10,000	5K						0.670	18h

数据表和文档

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ODG (Origin Data Global)

Datasheet11 页0 年前

库存历史记录

3 个月趋势:

+30.23%

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供应链

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-04-21

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSZ096N10LS5ATMA1 的描述。

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TSDSON-8, RoHS

Infineon SCT

MOSFET, N-CH, 100V, 40A, 150DEG C, 69W; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON-FL; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

Farnell

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Infineon