Infineon BSZ040N04LSGATMA1

Name: Infineon BSZ040N04LSGATMA1
Brand: Infineon
SKU: BSZ040N04LSGATMA1

40V 40A 2.1W 5.6mΩ@4.5V, 20A 2V@36uA 1 N-Channel TSDSON-8(3.3x3.3) MOSFETs ROHS

$ 0.433

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Distributor		SKU	Min	Pkg
Newark		BSZ040N04LSGATMA1	1	Cut Tape	1.480	0.917	0.619	0.419	0.419
Future Electronics	2	BSZ040N04LSGATMA1	5K	Tape & Reel					0.555
Avnet		BSZ040N04LSGATMA1	5K						0.316	18h
Arrow Electronics		BSZ040N04LSGATMA1	5K						0.324
Farnell	2	BSZ040N04LSGATMA1	1	Cut Tape	1.663*	1.031*	0.695*	0.472*	0.440*	2h

数据表和文档

下载 Infineon BSZ040N04LSGATMA1 的数据表和制造商文档。

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Datasheet9 页16 年前

_legacy Avnet

iiiC

Farnell

库存历史记录

3 个月趋势:

-99.20%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date2007-12-05

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSZ040N04LSGATMA1 的描述。

40V 40A 2.1W 5.6mΩ@4.5V,20A 2V@36uA 1 N-Channel TSDSON-8(3.3x3.3) MOSFETs ROHS

ODG (Origin Data Global)

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 40A, 40V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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