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描述
由其分销商提供的 Infineon BSP297L6327HTSA1 的描述。
MOSFET N-CH 200V 660MA SOT-223
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL-SIGNAL N-CHANNEL MOSFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)660 mA
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)200 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance357 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max1.8 Ω
Rise Time3.8 ns
Turn-Off Delay Time49 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.8 mm