Infineon BSO615CGHUMA1

Name: Infineon BSO615CGHUMA1
Brand: Infineon
SKU: BSO615CGHUMA1

Dual Mosfet, N And P Channel, 3.1 A, 60 V, 0.07 Ohm, 10 V, 1.6 V Rohs Compliant: Yes

Obsolete

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Distributor		SKU		Min	Pkg
Farnell	2	BSO615CGHUMA1	0	1	Cut Tape	1.932*	1.241*	0.854*	0.622*	0.567*	19h
Microchip USA		BSO615CGHUMA1	114	3500						0.337	11h
Win Source		WS-864724	9,520	21				1.902	1.595	1.595	19h
Worldway Electronics		BSO615CGHUMA1	13,606	7	Tape & Reel		0.242	0.235	0.222	0.222	18h
ICPartonline		BSO615CGHUMA1	17,800			0.528	0.501	0.475	0.448	0.422	1d

数据表和文档

下载 Infineon BSO615CGHUMA1 的数据表和制造商文档。

IHS

Datasheet13 页26 年前

Burklin Elektronik

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon BSO615CGHUMA1 的描述。

Dual Mosfet, N And P Channel, 3.1 A, 60 V, 0.07 Ohm, 10 V, 1.6 V Rohs Compliant: Yes

Newark

Dual N/P-Channel 60V 0.11/0.3 Ohm 15/13.5 nC SIPMOS® Small Signal Mosfet - DSO-8

Future Electronics

Trans MOSFET N/P-CH 60V 3.1A/2A Automotive 8-Pin DSO T/R

Verical

Power Field-Effect Transistor, 3.1A I(D), 60V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N & P CH, 60V, 3.1A, SOIC-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

Farnell

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineons famous low voltage OptiMOS families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Complementary p- + n-channel; Enhancement mode; Avalanche rated; Qualified according to AEC Q101; 100% lead-free; RoHS compliant | Target Applications: Automotive; DC-DC; Motor control; Onboard charger

Infineon