供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-13
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2011-02-28
LTD Date2011-08-31
相关零件
InfineonBSO051N03MS G
Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon BSO072N03S 的描述。
1.56W(Ta) 20V 2V@ 45¦ÌA 25nC@ 5 V 1N 30V 6.8m¦¸@ 15A,10V 12A 3.23nF@15V SOIC-8 4.9mm*3.9mm*1.75mm
12000 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET MS-012AA
Trans MOSFET N-CH 30V 12A 8-Pin DSO
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.23 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.56 W
Rds On Max6.8 mΩ
Rise Time5.4 ns
Turn-Off Delay Time27 ns
Voltage Rating (DC)30 V