Infineon BSM50GD120DN2BOSA1

Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A
NRND
制造商页面数据表

价格与库存

数据表和文档

下载 Infineon BSM50GD120DN2BOSA1 的数据表和制造商文档。

IHS

Datasheet10 页26 年前

Farnell

Newark

TME

iiiC

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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-01-01
Lifecycle StatusNRND (Last Updated: 4 months ago)
LTB Date2009-09-30
LTD Date2010-03-31

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描述

由其分销商提供的 Infineon BSM50GD120DN2BOSA1 的描述。

Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A
Verical
Transistor IGBT Module N-CH 1200V 72A 20V Screw Mount Tray
Avnet
INFINEON BSM50GD120DN2 IGBT Array & Module Transistor, N Channel, 72 A, 3 V, 350 W, 1.2 kV, EconoPACK
Jak Electronics
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel
IHS
IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV
element14 APAC

图片

TME
Farnell

制造商别名

Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号：

  • BSM 50 GD 120 DN2
  • BSM 50GD120 DN2
  • BSM50GD120DN2
  • SP000100359