Infineon BSC084P03NS3GATMA1

Name: Infineon BSC084P03NS3GATMA1
Brand: Infineon
SKU: BSC084P03NS3GATMA1

Transistor: P-MOSFET; unipolar; -30V; -78.6A; 69W; PG-TDSON-8

$ 0.438

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制造商页面数据表

价格与库存

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非授权经销商

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Distributor		SKU		Min	Pkg
Avnet	2	12AC9446	29	1		1.340	0.836	0.618	0.499	0.499	11h
Newark		BSC084P03NS3GATMA1	29	1	Cut Tape	0.382	0.382	0.382	0.382	0.382
Rochester Electronics		BSC084P03NS3GATMA1	4					0.483	0.401	0.357	9h
Arrow Electronics	2	BSC084P03NS3GATMA1	4,145	1		1.153	0.767	0.590	0.430	0.428
DigiKey	3	BSC084P03NS3GATMA1CT-ND	3,075	1	Cut Tape	1.880	1.191	0.793	0.567	0.520

数据表和文档

下载 Infineon BSC084P03NS3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

库存历史记录

3 个月趋势:

+27.19%

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供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-04-08

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BSC084P03NS3GATMA1 的描述。

Transistor: P-MOSFET; unipolar; -30V; -78.6A; 69W; PG-TDSON-8

Epart123

Trans MOSFET P-CH 30V 14.9A Automotive 8-Pin TDSON EP T/R

Verical

2.5W 25V 43nC@ 10V 1P 30V 8.4m¦¸@ 10V 3.19nF@ 15V SON , 5.15mm*590cm*1mm

UnikeyIC

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs, PG-TDSON-8, RoHS

Infineon SCT

P-CH -30V-78,6A 8,4mOhm TDSON-8

Rutronik

Mosfet, P-Ch, 30V, 78.6A, 150Deg C, 69W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:78.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon Technologies BSC084P03NS3GATMA1

Newark

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon