Infineon BSC059N04LS6ATMA1

Name: Infineon BSC059N04LS6ATMA1
Brand: Infineon
SKU: BSC059N04LS6ATMA1

Power MOSFET, N Channel, 40 V, 59 A, 0.0059 ohm, TDSON, Surface Mount

$ 0.426

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		BSC059N04LS6ATMA1	5,000	5K						0.331	22h
Newark	2	BSC059N04LS6ATMA1	8,985	5	Cut Tape		0.892	0.590	0.525	0.525
Arrow Electronics		BSC059N04LS6ATMA1	475	1		0.395	0.395	0.395	0.395	0.395
Future Electronics	2	BSC059N04LS6ATMA1	40,000	5K	Tape & Reel					0.625
Rochester Electronics		BSC059N04LS6ATMA1	1,453					0.424	0.352	0.314	19h

数据表和文档

下载 Infineon BSC059N04LS6ATMA1 的数据表和制造商文档。

IHS

Datasheet12 页0 年前

TME

库存历史记录

3 个月趋势:

-24.22%

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供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-07-31

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSC059N04LS6ATMA1 的描述。

Power MOSFET, N Channel, 40 V, 59 A, 0.0059 ohm, TDSON, Surface Mount

EBV Elektronik

OptiMO 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance

Avnet Japan

Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R

Verical

38W 20V 2.3V 9.4nC@ 10V 2N 40V 7m¦¸@ 10V,60A 59A 830pF@20V TDSON-8-EP

UnikeyIC

MOSFET N-CH 40V 17A TDSON / N-Channel 40 V 17A (Ta), 49A (Tc), 59A (Tc) 3W (Ta), 38W (Tc) Surface Mount PG-TDSON-8-6

Win Source

Power Field-Effect Transistor, 49A I(D), 40V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

40V, 59A, 5.9MOHM, N-CHANNEL, SuperSO8 5x6

Future Electronics

Mosfet, N-Ch, 40V, 59A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon Technologies BSC059N04LS6ATMA1

Newark

The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Infineon