Infineon BSC034N10LS5ATMA1

Name: Infineon BSC034N10LS5ATMA1
Brand: Infineon
SKU: BSC034N10LS5ATMA1

Power MOSFET, N Channel, 100 V, 100 A, 0.0034 ohm, TDSON, Surface Mount

$ 1.599

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Distributor		SKU		Min	Pkg
Avnet	2	42AH1619	2,366	1		2.520	2.180	1.900	1.720	1.720	2d
Newark		BSC034N10LS5ATMA1	21,127	1	Cut Tape	2.520	2.180	1.900	1.660	1.660
Arrow Electronics		BSC034N10LS5ATMA1	4,240	1		1.560	1.560	1.560	1.560	1.560
Future Electronics	2	BSC034N10LS5ATMA1	10,000	5K	Tape & Reel					1.210
Rochester Electronics		BSC034N10LS5ATMA1	109					1.600	1.330	1.180	23h

数据表和文档

下载 Infineon BSC034N10LS5ATMA1 的数据表和制造商文档。

IHS

Datasheet12 页0 年前

库存历史记录

3 个月趋势:

-11.66%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2019-05-10

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon BSC034N10LS5ATMA1 的描述。

Power MOSFET, N Channel, 100 V, 100 A, 0.0034 ohm, TDSON, Surface Mount

EBV Elektronik

Mosfet, N-Ch, 100V, 100A, 150Deg C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon Technologies BSC034N10LS5ATMA1

Newark

OptiMOS™ 5 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The device's low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Infineon