供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-12-02
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
描述
由其分销商提供的 Infineon BSC0302LSATMA1 的描述。
Transistor MOSFET N-Channel 120V 99A 8-Pin SOIC
Mosfet, N-Ch, 120V, 99A, Pg-Tdson Rohs Compliant: Yes |Infineon BSC0302LSATMA1
MOSFET, N-CH, 120V, 99A, PG-TDSON; Available until stocks are exhausted
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.Click here to view full portfolio.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)99 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)120 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation156 W
Turn-Off Delay Time37 ns
Turn-On Delay Time11 ns
Dimensions
Height1 mm