Infineon BSC028N06NSTATMA1

Name: Infineon BSC028N06NSTATMA1
Brand: Infineon
SKU: BSC028N06NSTATMA1

60 V 24 A 100 A 3 W 2.8mOhm Surface Mount N-Channel MOSFET - PG-TDSON-8

$ 1.1

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	93AC6985	76	1		3.370	2.340	1.740	1.520	1.520	3d
Newark	2	BSC028N06NSTATMA1	76	1	Cut Tape	3.370	2.340	1.940	1.940	1.940
Rochester Electronics		BSC028N06NSTATMA1	17,804					1.220	1.010	0.903	8h
DigiKey	3	BSC028N06NSTATMA1CT-ND	19,008	1	Cut Tape	3.160	2.049	1.414	1.098	1.098
Future Electronics	2	BSC028N06NSTATMA1	0	5K	Tape & Reel					1.800

数据表和文档

下载 Infineon BSC028N06NSTATMA1 的数据表和制造商文档。

IHS

Datasheet9 页13 年前

库存历史记录

3 个月趋势:

+18.41%

CAD 模型

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供应链

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-01-18

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon BSC028N06NSTATMA1 的描述。

60 V 24 A 100 A 3 W 2.8mOhm Surface Mount N-Channel MOSFET - PG-TDSON-8

Future Electronics

Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R

Avnet

OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness, PG-TDSON-8, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP

Verical

MOSFET N-CH 60V 24A/100A TDSON / N-Channel 60 V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7

Win Source

Power Field-Effect Transistor, 137A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

3W 20V 37nC@ 10V 60V 2.8m¦¸@ 10V 2.7nF@ 30V TDSON-8-EP

UnikeyIC

Infineon MOSFET BSC028N06NSTATMA1

RS APAC

BSC028N06 - N-CHANNEL POWER MOSF

DigiKey Marketplace

Mosfet, N-Ch, 60V, 100A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon Technologies BSC028N06NSTATMA1

Newark

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Infineon