Infineon BSC007N04LS6ATMA1

Name: Infineon BSC007N04LS6ATMA1
Brand: Infineon
SKU: BSC007N04LS6ATMA1

Mosfet TRENCH 40V N channel 0.7mohm Power pack 5x6 PG-TDSON-8

$ 1.852

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Distributor		SKU		Min	Pkg
Avnet		BSC007N04LS6ATMA1	5,000	5K						1.370	3d
Newark	2	BSC007N04LS6ATMA1	563	1	Cut Tape	5.540	3.620	2.830	2.600	2.600
Arrow Electronics	2	BSC007N04LS6ATMA1	25	1		2.424	1.944	1.611	1.611	1.611
DigiKey	3	BSC007N04LS6ATMA1CT-ND	3,339	1	Cut Tape	5.330	3.509	2.476	1.894	1.818
Future Electronics	2	BSC007N04LS6ATMA1	0	5K	Tape & Reel					3.380

数据表和文档

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IHS

Datasheet12 页0 年前

TME

库存历史记录

3 个月趋势:

-61.97%

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供应链

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-07-31

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BSC007N04LS6ATMA1 的描述。

Mosfet TRENCH 40V N channel 0.7mohm Power pack 5x6 PG-TDSON-8

Future Electronics

N-Channel 40V 100A 2.3V @ 250uA 0.7mΩ @ 50A,10V 188W TDSON-8 FL MOSFET RoHS

Jak Electronics

Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R

Verical

20V 2.3V 94nC 1N 40V 700¦Ì¦¸@ 10V,50A 100A 8.4nF@ 20V TDSON-8

UnikeyIC

Power Field-Effect Transistor, 319A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N-CH, 40V, 100A, TDSON;

Farnell

N-CH 40V 100A 0.7mOhm TDSON-8FL

Rutronik

Compliant 1 mm 3 W 1 8 ns 40 ns 175 °C

Augswan

FET Input Operational Amplifier

Weyland Electronics Group Pte. Ltd.

Mosfet, N-Ch, 40V, 100A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon Technologies BSC007N04LS6ATMA1

Newark

The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Infineon