Infineon BSC005N03LS5ATMA1

Name: Infineon BSC005N03LS5ATMA1
Brand: Infineon
SKU: BSC005N03LS5ATMA1

Mosfet, N-Ch, 30V, 433A, Tdson Rohs Compliant: Yes |Infineon Technologies BSC005N03LS5ATMA1

$ 1.078

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Distributor		SKU		Min	Pkg
Newark		BSC005N03LS5ATMA1	495	1	Cut Tape	3.480	2.380	1.750	1.440	1.440
Arrow Electronics		BSC005N03LS5ATMA1	3,894	1		2.569	1.810	1.306	0.835	0.835
Rochester Electronics		BSC005N03LS5ATMA1	302					1.130	0.938	0.836	3h
DigiKey	2	448-BSC005N03LS5ATMA1CT-ND	4,725	1	Cut Tape	3.120	2.021	1.394	1.078	1.078
Avnet		BSC005N03LS5ATMA1	0	5K						0.899	5h

数据表和文档

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IHS

Datasheet12 页0 年前

库存历史记录

3 个月趋势:

-14.16%

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供应链

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-04-16

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon BSC005N03LS5ATMA1 的描述。

Mosfet, N-Ch, 30V, 433A, Tdson Rohs Compliant: Yes |Infineon Technologies BSC005N03LS5ATMA1

Newark

Transistor MOSFET N-Channel 30V 433A 8-Pin TDSON FL

Avnet

Trans MOSFET N-CH 30V 42A 8-Pin TDSON EP T/R

Verical

TRENCH <= 40V / N-Channel 30 V 42A (Ta), 433A (Tc) 3W (Ta), 188W (Tc) Surface Mount PG-TDSON-8 FL

Win Source

Power Field-Effect Transistor, 433A I(D), 30V, 0.00095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS OptiMOS, Vds=30 V, 433 A, TDSON, , 8

UnikeyIC

场效应管, MOSFET, N沟道, 30V, 433A, TDSON;

element14 APAC

1 mm 3 W 1 21 ns 48.4 ns 175 °C -55 °C 480 µΩ

Augswan

N-CH 30V 433A 0.48mOhm SuperSO8

Rutronik

With this OptiMOSTM 5 power MOSFET 30V, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. The BSC005N03LS5 offers BiC RDS(on) of 0.55mOhm.

Infineon