Infineon BFR181WH6327XTSA1

Name: Infineon BFR181WH6327XTSA1
Brand: Infineon
SKU: BFR181WH6327XTSA1

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN

$ 0.13

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	BFR181WH6327XTSA1	2,765	1		0.300	0.206	0.154	0.125	0.125
Rutronik		THF5178	6,000	3K						0.120	7h
Rochester Electronics		BFR181WH6327XTSA1	133					0.147	0.122	0.109	1d
DigiKey	3	BFR181WH6327XTSA1CT-ND	61,429	1	Cut Tape	0.310	0.215	0.164	0.137	0.137
Newark	2	BFR181WH6327XTSA1	0	5	Cut Tape		0.257	0.219	0.219	0.219

数据表和文档

下载 Infineon BFR181WH6327XTSA1 的数据表和制造商文档。

IHS

Datasheet6 页12 年前

TME

_legacy Avnet

Farnell

库存历史记录

3 个月趋势:

+146%

CAD 模型

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-06-24

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

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描述

由其分销商提供的 Infineon BFR181WH6327XTSA1 的描述。

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN

IHS

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-323

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NPN 175mW 2V 100¦ÌA 20V 12V 20mA SOT-323 2mm*1.25mm

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HQonline

RF TRANSISTOR, SOT-323; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:12V; Continuous Collector Current Ic:20mA; ft, Typ:8GHz; Case Style:SOT-323; Power, Dissipation Pd:175mW; Termination;RoHS Compliant: Yes

Newark

Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 20 / Collector-Emitter Voltage (Vceo) V = 12 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 20 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 8 / Power Dissipation (Pd) mW = 175 / Package Type = SC-70 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

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