Infineon BFP640H6327XTSA1

Name: Infineon BFP640H6327XTSA1
Brand: Infineon
SKU: BFP640H6327XTSA1

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN

$ 0.238

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	BFP640H6327XTSA1	1,913	1		0.185	0.182	0.176	0.168	0.168
Rochester Electronics		BFP640H6327XTSA1	24,548					0.261	0.217	0.193	16h
DigiKey	2	BFP640H6327XTSA1CT-ND	1,565	1	Cut Tape	0.510	0.360	0.280	0.238	0.238
Newark	2	BFP640H6327XTSA1	0	5	Cut Tape		0.364	0.282	0.239	0.239
Avnet		BFP640H6327XTSA1	0	3K						0.161	3d

数据表和文档

下载 Infineon BFP640H6327XTSA1 的数据表和制造商文档。

IHS

Datasheet21 页7 年前

Newark

TME

Farnell

_legacy Avnet

库存历史记录

3 个月趋势:

-59.20%

CAD 模型

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-07-25

Lifecycle StatusNRND (Last Updated: 6 days ago)

描述

由其分销商提供的 Infineon BFP640H6327XTSA1 的描述。

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN

Semicontronic

RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4V; Transition Frequency ft: 40GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 180hFE; RF Transistor Case

Farnell

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 50 / Collector-Emitter Voltage (Vceo) V = 4.1 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 13 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 42 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

Distrelec

Summary of Features: High gain low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz; High maximum stable gain :Gms = 24 dB at 1.8 GHz; Gold metallization for extra high reliability; 70 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101

Infineon