Infineon BFP620H7764XTSA1

Name: Infineon BFP620H7764XTSA1
Brand: Infineon
SKU: BFP620H7764XTSA1

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN

$ 0.271

NRND

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Distributor		SKU		Min	Pkg
Newark		BFP620H7764XTSA1	4,293	1	Cut Tape	0.598	0.408	0.344	0.322	0.322
Arrow Electronics	4	BFP620H7764XTSA1	776	1		0.441	0.322	0.257	0.229	0.229
DigiKey	3	BFP620H7764XTSA1CT-ND	6,287	1	Cut Tape	0.630	0.442	0.344	0.292	0.292
Avnet		BFP620H7764XTSA1	0	3K						0.169	15h
Future Electronics		BFP620H7764XTSA1	0	3K	Tape & Reel					0.176

数据表和文档

下载 Infineon BFP620H7764XTSA1 的数据表和制造商文档。

IHS

Datasheet15 页7 年前

element14 APAC

_legacy Avnet

iiiC

Farnell

库存历史记录

3 个月趋势:

-8.88%

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来源	eCAD	mCAD	文件
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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-05-01

Lifecycle StatusNRND (Last Updated: 3 weeks ago)

LTB Date2003-03-31

LTD Date2004-09-30

描述

由其分销商提供的 Infineon BFP620H7764XTSA1 的描述。

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN

Abacus Technologies

RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.3V; Transition Frequency ft: 65GHz; Power Dissipation Pd: 185mW; DC Collector Current: 80mA; DC Current Gain hFE: 180hFE; RF Transistor Ca

Farnell

Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 2.3 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 7.5 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 65 / Power Dissipation (Pd) mW = 185 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

Distrelec

Summary of Features: Highly linear low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Based on Infineon's reliable high volume SiGe:C technology; Ideal for CDMA and WLAN applications; Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application; Maximum stable gain :Gms = 21.5 dB at 1.8 GHz ,Gma = 11 dB at 6 GHz; Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz; Outstanding noise figure NFmin = 1.3 dB at 6 GHz; Accurate SPICE GP model enables effective design in process; Pb-free (RoHS compliant) package; Qualified according AEC Q101

Infineon

Transistor, RF SOT-343; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:2.3V; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; No. of Pins:3; Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Typ:65GHz; Hfe Min:110; No. of Transistors:1; Noise Figure Typ:0.7dB; Output @ Third Order Intercept Point IP3:25dB; Package / Case:TSFP4; Power @ 1dB Gain Compression, P1dB:15dBm; Power Dissipation Ptot Max:185mW; SMD Marking:R2s; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:7.5V

element14 APAC