Infineon BFP520H6327XTSA1

Name: Infineon BFP520H6327XTSA1
Brand: Infineon
SKU: BFP520H6327XTSA1

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN

$ 0.235

NRND

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Distributor		SKU		Min	Pkg
Newark		BFP520H6327XTSA1	855	1	Cut Tape	0.593	0.440	0.360	0.318	0.318
Arrow Electronics	2	BFP520H6327XTSA1	5,704	1		0.094	0.094	0.094	0.094	0.094
Rochester Electronics		BFP520H6327XTSA1	42,465					0.264	0.219	0.195	20h
DigiKey	3	BFP520H6327XTSA1CT-ND	5,901	1	Cut Tape	0.520	0.364	0.283	0.240	0.240
Avnet		BFP520H6327XTSA1	0	6K						0.173	3d

数据表和文档

下载 Infineon BFP520H6327XTSA1 的数据表和制造商文档。

Farnell

Datasheet14 页7 年前

IHS

TME

_legacy Avnet

库存历史记录

3 个月趋势:

+6.54%

CAD 模型

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-11-01

Lifecycle StatusNRND (Last Updated: 6 days ago)

描述

由其分销商提供的 Infineon BFP520H6327XTSA1 的描述。

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN

IHS

BFP520 Series 3.5 V 50 mA Low Noise Silicon RF Bipolar Transistor - SOT343-4

Future Electronics

Trans RF BJT NPN 2.5V 0.05A 125mW Automotive AEC-Q101 4-Pin SOT-343 T/R

Verical

Bipolar 125mW 1V 30nA 10V 20V 50mA SOT-343 , 2mm*1.25mm*900¦Ìm

UnikeyIC

NPN-RF 2,5V 50mA 125mW 45GHz SOT343R

Schukat

3.5V 100mW NPN - Bipolar Transistors - BJT ROHS

Dasenic

RF Bipolar Transistors RF BIP TRANSISTOR

Fly-Wing Technology

Infineon RF Bip Transisitor BFP 520F H63

RS APAC

NPN RF-Transistor 1,8GHz PTSFP4

Rutronik

RF TRANS NPN 3.5V 45GHZ SOT343-4

Vigor Components

RF TRANSISTOR, NPN, 2.5V, 45GHZ, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.5V; Transition Frequency ft: 45GHz; Power Dissipation Pd: 125mW; DC Collector Current: 50mA; DC Current Gain hFE: 70hFE; RF Transistor Case: SOT-343; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 50 / Collector-Emitter Voltage (Vceo) V = 2.5 / DC Current Gain (hFE) = 110 / Collector-Base Voltage (Vcbo) V = 10 / Emitter-Base Voltage (Vebo) V = 1 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 45 / Power Dissipation (Pd) mW = 125 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

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