Infineon BFP193WH6327XTSA1

Name: Infineon BFP193WH6327XTSA1
Brand: Infineon
SKU: BFP193WH6327XTSA1

BFP193W Series 12 V 80 mA Low Noise Silicon Bipolar RF Transistor - SOT-343

$ 0.122

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		BFP193WH6327XTSA1	2,770	5	Cut Tape		0.234	0.188	0.163	0.163
Arrow Electronics	3	BFP193WH6327XTSA1	22,590	1		0.048	0.048	0.048	0.048	0.048
DigiKey	3	BFP193WH6327XTSA1CT-ND	49,812	1	Cut Tape	0.280	0.193	0.147	0.123	0.123
Avnet		BFP193WH6327XTSA1	0	9K						0.086	3d
Future Electronics		BFP193WH6327XTSA1	0	3K	Tape & Reel					0.087

数据表和文档

下载 Infineon BFP193WH6327XTSA1 的数据表和制造商文档。

TME

Datasheet6 页12 年前

IHS

_legacy Avnet

Farnell

库存历史记录

3 个月趋势:

-1.01%

CAD 模型

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-09-04

Lifecycle StatusNRND (Last Updated: 6 days ago)

描述

由其分销商提供的 Infineon BFP193WH6327XTSA1 的描述。

BFP193W Series 12 V 80 mA Low Noise Silicon Bipolar RF Transistor - SOT-343

Future Electronics

RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF

element14 APAC

Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 12 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 20 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 8 / Power Dissipation (Pd) mW = 580 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101

Distrelec

RF TRANSISTOR, NPN, SOT-343; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:12V; Continuous Collector Current Ic:80mA; ft, Typ:8GHz; Case Style:SOT-343; Power Dissipation Pd:580mW; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Associated Gain Ga:20.5dB; Noise:1dB; Test Frequency:900MHz; Transistors, No. of:1; ft, Min:6000MHz; Current Ic @ Gms:30mA; Current Ic Continuous a Max:0.05A; Current Ic Fc Measurement:10mA; Current Ic Max:0.05A; Current Ic av:80mA; Current Ic hFE:30mA; Gms:13dB; Min Hfe:50; Noise Level, Fc @ Ic:2.1dB; Power, Ptot:580mW; SMD Marking:RCs; Voltage, Vcbo:20V

Farnell