价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BCR116E6327HTSA1 | 40,434 | 5 | Cut Tape | ||||||||
| Rochester Electronics | BCR116E6327HTSA1 | 30,000 | 8h | |||||||||
| DigiKey | BCR116E6327HTSA1CT-ND | 3,105 | 1 | Cut Tape | ||||||||
| Avnet | BCR116E6327HTSA1 | 0 | 39K | 10h | ||||||||
| Future Electronics | BCR116E6327HTSA1 | 0 | 3K | Tape & Reel |
供应链
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-08-01
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2013-12-31
LTD Date2015-12-31
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描述
由其分销商提供的 Infineon BCR116E6327HTSA1 的描述。
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
BCR116 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Digital Trans, 50V, 4.7K/47K, Sot-23-3; Collector Emitter Voltage V(Br)Ceo:50V; No. Of Pins:3Pins; Product Range:Aec-Q101; Automotive Qualification Standard:Aec-Q101; Msl:Msl 1 - Unlimited; Svhc:No Svhc (27-Jun-2018); Base Input Rohs Compliant: Yes |Infineon Technologies BCR116E6327HTSA1
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 4.7 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 150
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product150 MHz
hFE Min70
Input Resistance4.7 kΩ
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency150 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm
合规
环境分类
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
合规声明